Title :
Hybrid integrated differential photoreceiver comprising dual-PD and high-speed GaAs amplifier IC assembled on planar lightwave circuit platform
Author :
Ohyama, T. ; Yamada, T. ; Akahori, Y. ; Oguma, M. ; Sugita, A. ; Kato, K.
Author_Institution :
NTT Photonics Labs., Ibaraki, Japan
fDate :
10/28/1999 12:00:00 AM
Abstract :
A hybrid integrated differential photoreceiver has been successfully fabricated which comprises a dual photodiode (dual-PD) and a high-speed GaAs amplifier integrated circuit (IC) on a planar lightwave circuit (LC) platform with integrated metal-insulation-metal (MIM) structural capacitors by using a novel flip-chip bonding technique. The bandwidth of the photoreceiver is wide enough to receive a 12 Gbit/s Manchester-encoded optical signal
Keywords :
III-V semiconductors; differential amplifiers; flip-chip devices; gallium arsenide; high-speed integrated circuits; integrated optoelectronics; optical receivers; photodiodes; 12 Gbit/s; GaAs; Manchester encoded optical signal; bandwidth; dual photodiode; flip-chip bonding; high-speed GaAs amplifier integrated circuit; hybrid integrated differential photoreceiver; metal-insulator-metal capacitor; planar lightwave circuit;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991294
