Title :
Analytical approximation for perturbation of MOSFET surface potential by polysilicon depletion layer
Author :
Gildenblat, G. ; Chen, T.L. ; Bendix, P.
Author_Institution :
Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA
fDate :
10/28/1999 12:00:00 AM
Abstract :
Compact MOSFET models require a computationally efficient description of the polysilicon depletion effect. An analytical solution is presented for the perturbation of the MOSFET surface potential by the polysilicon depletion region. Unlike earlier closed-form approximations, the new result is valid in all regions of the device operation and is compatible with surface-potential-based MOSFET models
Keywords :
MOSFET; semiconductor device models; surface potential; MOSFET; Si; analytical model; polysilicon depletion layer; surface potential;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991325
