DocumentCode
1282070
Title
Analytical approximation for perturbation of MOSFET surface potential by polysilicon depletion layer
Author
Gildenblat, G. ; Chen, T.L. ; Bendix, P.
Author_Institution
Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA
Volume
35
Issue
22
fYear
1999
fDate
10/28/1999 12:00:00 AM
Firstpage
1974
Lastpage
1976
Abstract
Compact MOSFET models require a computationally efficient description of the polysilicon depletion effect. An analytical solution is presented for the perturbation of the MOSFET surface potential by the polysilicon depletion region. Unlike earlier closed-form approximations, the new result is valid in all regions of the device operation and is compatible with surface-potential-based MOSFET models
Keywords
MOSFET; semiconductor device models; surface potential; MOSFET; Si; analytical model; polysilicon depletion layer; surface potential;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19991325
Filename
811104
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