InGaP/GaAs ballistic collection transistors with buried polycrystalline GaAs under base electrode

Author

Mochizuki, K. ; Hirata, K. ; Ouchi, K. ; Tanoue, T.

Author_Institution

Central Res. Lab., Hitachi Ltd., Tokyo, Japan

Volume

33

Issue

18

fYear

1997

fDate

8/28/1997 12:00:00 AM

Firstpage

1584

Lastpage

1585

Abstract

InGaP/GaAs ballistic collection transistors, with buried polycrystalline GaAs under the base electrode, have been fabricated by using gas-source molecular beam epitaxial growth on SiO₂-patterned GaAs substrates. Heavy C-doping in the base led to a high maximum oscillation frequency of 170 GHz while maintaining a high cutoff frequency of 170 GHz. Owing to the reduction in base-collector capacitance, maximum stable gain was increased by 2.3 dB compared to that of transistors without polycrystalline GaAs

Keywords

III-V semiconductors; buried layers; capacitance; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; millimetre wave bipolar transistors; molecular beam epitaxial growth; 170 GHz; EHF; GSMBE growth; GaAs; HBT; InGaP:Si-GaAs:C; SiO₂; SiO₂-patterned GaAs substrates; ballistic collection transistors; base electrode; base-collector capacitance; buried polycrystalline GaAs; cutoff frequency; gas-source MBE growth; heavily doped base; heavy C-doping; maximum oscillation frequency; maximum stable gain; molecular beam epitaxial growth;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19971032

Filename

629677