DocumentCode
1282121
Title
Low-temperature grown GaAs tunnel junctions
Author
Ahmed, S. ; Melloch, M.R. ; McInturff, D.T. ; Woodall, J.M. ; Harmon, E.S
Author_Institution
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Volume
33
Issue
18
fYear
1997
fDate
8/28/1997 12:00:00 AM
Firstpage
1585
Lastpage
1587
Abstract
A GaAs tunnel junction is formed by molecular beam epitaxy at low substrate temperatures to incorporate excess arsenic, followed by an anneal to precipitate the excess arsenic. This tunnel junction is comparable in resistance and peak current density to tunnel junctions grown stoichiometrically. Owing to the inhomogeneity in this two-phase tunnel junction, there is only a slight indication of a current peak. This lack of a valley in the tunnelling characteristic results in a low voltage drop even for currents in excess of the peak current
Keywords
III-V semiconductors; current density; gallium arsenide; molecular beam epitaxial growth; p-n junctions; semiconductor growth; tunnelling; GaAs; GaAs tunnel junctions; MBE; anneal; excess As; low substrate temperatures; low voltage drop; low-temperature grown junctions; molecular beam epitaxy; peak current density; resistance; tunnelling characteristic; two-phase tunnel junction;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19971047
Filename
629678
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