MOCVD-grown 0.25- mu m MESFET´s using tertiary butyl arsine as the arsenic source

Author

Mao, Bor-yen ; Sundaram, V.S. ; Zurek, S.J. ; Levy, H.W. ; Martin, G.H. ; Fraas, L.M. ; Lee, Gi-young

Author_Institution

Boeing Aerosp. & Electron., Seattle, WA, USA

Volume

11

Issue

9

fYear

1990

Firstpage

397

Lastpage

399

Abstract

High-performance 0.25- mu m-gate MESFETs on MOCVD-grown epitaxial structure have been fabricated using tertiary butyl arsine (TBA) as the arsenic source. TBA, a liquid-phase organometallic arsenic compound, is a promising alternate arsenic source due to its lower vapor pressure, which makes it safer to handle than arsine. DC characterizations show that the extrinsic peak transconductance is 508 mS/mm. From on-wafer S-parameter measurements, the MESFETs show a current-gain cutoff frequency of 55 GHz and a maximum-available-gain cutoff frequency of 93 GHz. These results represent the best results reported for MOCVD-grown MESFETs using a TBA source and compare favorably with the previously reported f/sub t/ of 40 GHz for molecular beam epitaxy (MBE)-grown MESFETs.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; chemical vapour deposition; gallium arsenide; semiconductor epitaxial layers; semiconductor growth; solid-state microwave devices; vapour phase epitaxial growth; As source; DC characterizations; GaAs growth; MOCVD-grown MESFETs; MOCVD-grown epitaxial structure; TBA; current-gain cutoff frequency; extrinsic peak transconductance; liquid-phase organometallic arsenic compound; maximum-available-gain cutoff frequency; on-wafer S-parameter measurements; safer to handle; semiconductors; tertiary butyl arsine; vapor pressure; Doping; Epitaxial layers; Gallium arsenide; Lithography; MESFETs; MOCVD; Metallization; Substrates; Threshold voltage; Transconductance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.62968

Filename

62968