Title :
Bottom-Contact Pentacene Thin-Film Transistors on Silicon Nitride
Author :
Stott, James ; Kumatani, Akichika ; Minari, Takeo ; Tsukagoshi, Kazuhito ; Heutz, Sandrine ; Aeppli, Gabriel ; Nathan, Arokia
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. London, London, UK
Abstract :
We fabricate high-performance pentacene thin-film transistors (TFTs) using lithographic processes compatible with industry standard amorphous silicon (a-Si) TFT fabrication. Bottom-contact bottom-gate pentacene TFTs realized with silicon nitride (SiNx) gate dielectric show effective mobility values of 0.59 cm2/Vs, contact resistances as low as 2.4 kΩ·cm , and low threshold voltages. These results demonstrate the viability of using SiNx as a gate dielectric for vacuum-deposited organic TFTs for large-area and flexible electronic applications.
Keywords :
silicon compounds; thin film transistors; SiNx; amorphous silicon TFT fabrication; bottom-contact pentacene thin-film transistors; flexible electronic application; high-performance pentacene thin-film transistors; large-area electronic application; silicon nitride; vacuum-deposited organic TFT; Contact resistance; Dielectrics; Logic gates; Pentacene; Silicon; Thin film transistors; Contact resistance; organic thin film transistors; pentacene; silicon nitride;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2160520
