DocumentCode
1282243
Title
Source follower or charge amplifier? An experimental comparison using a detector with integrated electronics
Author
Sampietro, M. ; Fasoli, L. ; Bertuccio, G.
Author_Institution
Dipartimento di Elettronica e Inf., Politecnico di Milano, Italy
Volume
43
Issue
4
fYear
1996
fDate
8/1/1996 12:00:00 AM
Firstpage
2413
Lastpage
2418
Abstract
In spectroscopy systems where the front-end amplifier is an external circuit, charge sensitive preamplifiers have been shown to be superior in performance with respect to voltage amplifiers as the first stage of amplification. The paper studies how these two circuit configurations behave when they are integrated in high resolution semiconductor detectors of very small capacitance. This paper for the first time compares, in this new condition, the stability of amplification of the source follower with the optimum behavior of the charge preamplifier, reporting its dependence on the detector bias, on the input transistor bias, and on the operating temperature. This paper then discusses the consequent loss in linearity and resolution that a system with an integrated source follower may undergo depending on the type of reset mechanism. The point of how the instabilities of the integrated feedback capacitance limit the performance of an integrated charge amplifier is also addressed. The analysis is based on experimental results obtained with the same detector with integrated electronics used in the two different configurations
Keywords
detector circuits; nuclear electronics; preamplifiers; capacitance; charge amplifier; charge preamplifier; charge sensitive preamplifiers; circuit configurations; detector bias; detector integrated electronics; external circuit; front-end amplifier; high resolution semiconductor detectors; input transistor bias; integrated feedback capacitance; linearity loss; operating temperature; reset mechanism; resolution loss; source follower; spectroscopy systems; voltage amplifiers; Capacitance; Circuit stability; Feedback; Optical amplifiers; Preamplifiers; Radiation detectors; Semiconductor device noise; Signal to noise ratio; Spectroscopy; Voltage;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.531790
Filename
531790
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