An Inversion-Charge Analytical Model for Square Gate-All-Around MOSFETs

Author

Pérez, Enrique Moreno ; Aranda, Juan Bautista Roldán ; Ruiz, Francisco J García ; Rosillo, Domingo Barrera ; Pérez, María José Ibáñez ; Godoy, Andrés ; Gámiz, Francisco

Author_Institution

Dept. of Electron. & Comput. Technol., Univ. of Granada, Granada, Spain

Volume

58

Issue

9

fYear

2011

Firstpage

2854

Lastpage

2861

Abstract

A new approach to the analytical solution of the 2-D Poisson equation including the inversion-charge density in undoped square gate-all-around metal-oxide-semiconductor field-effect transistors has been developed. We have obtained functions with different degrees of complexity to calculate the electric potential in the devices under study. The results obtained are compared with the data simulated by solving the Poisson equation numerically. A good fit is achieved both for the electric potential and the inversion charge, which are calculated by means of Gauss´s law.

Keywords

MOSFET; Poisson equation; semiconductor device models; 2D Poisson equation; Gauss law; inversion-charge analytical model; square gate-all-around MOSFET; square gate-all-around metal-oxide-semiconductor field-effect transistors; Data models; Electric potential; Logic gates; MOSFETs; Mathematical model; Poisson equations; Silicon; MOSFETs; semiconductor device modeling; silicon devices; thin film devices;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2011.2159222

Filename

5961616