Characterization of carrier generation in enhancement-mode SOI MOSFET´s

Author

Ioannou, Dimitris E. ; Cristoloveanu, Sqrin ; Mukherjee, Mousumi ; Mazhari, Baquer

Author_Institution

Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA

Volume

11

Issue

9

fYear

1990

Firstpage

409

Lastpage

411

Abstract

The carrier generation in enhancement-mode SOI MOSFETs is studied by applying a suitable bias step on one gate, which drives it from depletion of accumulation to stronger accumulation and creates a deep-depletion condition under the other gate. An accurate analysis of this technique is made through a critical reexamination of the physical mechanisms and assumptions involved. By carefully considering all the essential events taking place in the device as it relaxes back to steady state, a Zerbst-type expression is obtained for the resulting current transients, which leads to a straightforward evaluation of the generation lifetime and surface generation velocity. The method is used to study SIMOX transistors, and it is shown that a very long lifetime can be achieved by multiple oxygen implants.<>

Keywords

insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; E-mode; SIMOX transistors; Zerbst-type expression; assumptions; bias step; carrier generation characterization; current transients; dual-gate deep depletion method; enhancement-mode SOI MOSFETs; generation lifetime; long lifetime; multiple oxygen implants; physical mechanisms; surface generation velocity; Capacitance measurement; Character generation; Current measurement; Electrical resistance measurement; Equations; Implants; Integrated circuit measurements; MOSFET circuits; Steady-state; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.62972

Filename

62972