Title :
A high-speed bipolar technology featuring self-aligned single-poly base and submicrometer emitter contacts
Author :
Huang, W.M. ; Drowley, C.I. ; Vande Voorde, P.J. ; Pettengill, D. ; Turner, J.E. ; Kapoor, A.K. ; Lin, C.-H. ; Burton, G. ; Rosner, S.J. ; Brigham, K. ; Fu, H.S. ; Oh, S.Y. ; Scott, M.P. ; Chiang, S.Y. ; Wang, A.
Author_Institution :
Hewlett-Packard Co., Palo Alto, CA, USA
Abstract :
An experimental bipolar transistor structure with self-aligned base-emitter contacts formed using one polysilicon layer is presented with geometries and frequency performance comparable to those of double-polysilicon structures. This structure, called STRIPE (self-aligned trench-isolated polysilicon electrodes), provides a 0.2- mu m emitter-base polysilicon contact separation. A 0.4- mu m emitter width is achieved with conventional 0.8- mu m optical lithography. Scaling of the emitter width of 0.3 mu m has been performed with minimal degradation of device performance, and scaling of the emitter width pattern to 0.2 mu m has been demonstrated. These dimensions are the smallest achieved in single-polysilicon structures with polysilicon base contacts and are comparable to those achieved in double-polysilicon structures. The STRIPE structure has been used to fabricate transistors with f/sub t/ as high as 33.8 GHz.<>
Keywords :
bipolar transistors; elemental semiconductors; semiconductor technology; silicon; solid-state microwave devices; 0.2 to 0.4 micron; 33.8 GHz; STRIPE; bipolar transistor structure; device performance; emitter width; emitter-base polysilicon contact separation; frequency performance; high-speed bipolar technology; optical lithography; polysilicon base contacts; scaling; self-aligned base-emitter contacts; self-aligned single-poly base; self-aligned trench-isolated polysilicon electrodes; semiconductors; single-polysilicon structures; submicrometer emitter contacts; Bipolar transistors; Capacitance; Etching; Geometrical optics; High speed optical techniques; Implants; Lithography; Space technology; Stimulated emission; Substrates;
Journal_Title :
Electron Device Letters, IEEE
