Title :
Non-alloyed Au/p-ZnSe/p-BeTe ohmic contact layers for ZnSe-based blue-green laser diodes
Author :
Cho, M.W. ; Saeki, S. ; Hong, S.K. ; Chang, J.H. ; Nakajima, M. ; Yao, T. ; Yoon, T.H. ; Lee, J.H.
Author_Institution :
Inst. of Mater. Res., Tohoku Univ., Sendai, Japan
fDate :
9/30/1999 12:00:00 AM
Abstract :
Non-alloyed Au/p-ZnSe/p-BeTe ohmic contact layers for ZnSe based blue-green laser diodes with contact resistivity as low as 4.2×10 -4 Ωcm2 are reported. This contact layer is basically dislocation free due to the low level of lattice misfit, as confirmed by TEM observations. The ZnSe layer serves as a contact layer and also as a protection layer for BeTe against oxidation. The electrical properties of the contact layers are strongly dependent on the ZnSe layer thickness. Au diffusion through the ZnSe layer down to the BeTe layer at room temperature is found to be responsible for the ohmic properties
Keywords :
II-VI semiconductors; beryllium compounds; contact resistance; gold; laser beams; ohmic contacts; semiconductor lasers; transmission electron microscopy; zinc compounds; 298 K; Au diffusion; Au-ZnSe-BeTe; Au/p-ZnSe/p-BeTe ohmic contact layers; BeTe layer; ZnSe; ZnSe layer; ZnSe-based blue-green laser diodes; blue-green laser diodes; contact layers; contact resistivity; dislocation free layer; electrical properties; lattice misfit; layer thickness; nonalloyed ohmic contact layers; ohmic contact layers; ohmic properties; oxidation; protection layer; room temperature;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991220
