Non-alloyed Au/p-ZnSe/p-BeTe ohmic contact layers for ZnSe-based blue-green laser diodes

Author

Cho, M.W. ; Saeki, S. ; Hong, S.K. ; Chang, J.H. ; Nakajima, M. ; Yao, T. ; Yoon, T.H. ; Lee, J.H.

Author_Institution

Inst. of Mater. Res., Tohoku Univ., Sendai, Japan

Volume

35

Issue

20

fYear

1999

fDate

9/30/1999 12:00:00 AM

Firstpage

1740

Lastpage

1742

Abstract

Non-alloyed Au/p-ZnSe/p-BeTe ohmic contact layers for ZnSe based blue-green laser diodes with contact resistivity as low as 4.2×10 ^-4 Ωcm² are reported. This contact layer is basically dislocation free due to the low level of lattice misfit, as confirmed by TEM observations. The ZnSe layer serves as a contact layer and also as a protection layer for BeTe against oxidation. The electrical properties of the contact layers are strongly dependent on the ZnSe layer thickness. Au diffusion through the ZnSe layer down to the BeTe layer at room temperature is found to be responsible for the ohmic properties

Keywords

II-VI semiconductors; beryllium compounds; contact resistance; gold; laser beams; ohmic contacts; semiconductor lasers; transmission electron microscopy; zinc compounds; 298 K; Au diffusion; Au-ZnSe-BeTe; Au/p-ZnSe/p-BeTe ohmic contact layers; BeTe layer; ZnSe; ZnSe layer; ZnSe-based blue-green laser diodes; blue-green laser diodes; contact layers; contact resistivity; dislocation free layer; electrical properties; lattice misfit; layer thickness; nonalloyed ohmic contact layers; ohmic contact layers; ohmic properties; oxidation; protection layer; room temperature;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19991220

Filename

811156