Title :
Comparison of InGaAs pin photodiodes with Ti/Pt/Au and Au reflectors
Author :
Ho, Chong-Long ; Ho, Wen-Jeng ; Wu, Meng-Chyi ; Liaw, Jy-Wang
Author_Institution :
Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
fDate :
9/30/1999 12:00:00 AM
Abstract :
The authors have fabricated planar InGaAs pin photodiodes designed for high-speed operation with rear metallic reflectors. The effectiveness of both Ti-Pt-Au and Au reflectors for enhancing the photoresponse of InGaAs pin photodiodes is evaluated. The experimental results show that an InGaAs pin photodiode with a 1 μm absorption layer can achieve a responsivity >0.9 A/W (~86% quantum efficiency) at 1.3 μm wavelength with an Au reflector but can achieve only ~0.8 A/W (~76% quantum efficiency) with a Ti/Pt/Au reflector. Furthermore, the reflectivity of both metallic mirrors (~0.9 for Au and ~0.4 for Ti/Pt/Au) is extracted using a simple theoretical model
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; mirrors; optical fabrication; optical planar waveguides; p-i-n photodiodes; reflectivity; 1.3 mum; 86 percent; Au; Au reflectors; InGaAs; InGaAs pin photodiode; InGaAs pin photodiodes; Ti-Pt-Au; Ti/Pt/Au; absorption layer; metallic mirrors; photoresponse; planar InGaAs pin photodiode fabrication; quantum efficiency; rear metallic reflectors; reflectivity; responsivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991191
