Title :
First epitaxial pnp bipolar transistor on diamond with deep nitrogen donor
Author :
Aleksov, A. ; Denisenko, A. ; Kohn, E.
Author_Institution :
Dept. of Electron. Devices & Circuits, Ulm Univ., Germany
fDate :
9/30/1999 12:00:00 AM
Abstract :
Vertical pnp bipolar transistors on diamond have been fabricated by doping the base with deep nitrogen donor (Ec-Ed=1.7 eV). The pn junction formed by the nitrogen donors and boron acceptors was confirmed. Transistor characteristics in common emitter and common-base modes were measured at room temperature
Keywords :
bipolar transistors; deep levels; diamond; elemental semiconductors; nitrogen; semiconductor doping; semiconductor epitaxial layers; wide band gap semiconductors; C:N-C:B; boron acceptor; deep nitrogen donor; diamond substrate; doping; epitaxial pnp bipolar transistor; pn junction;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991201
