• DocumentCode
    1282518
  • Title

    First epitaxial pnp bipolar transistor on diamond with deep nitrogen donor

  • Author

    Aleksov, A. ; Denisenko, A. ; Kohn, E.

  • Author_Institution
    Dept. of Electron. Devices & Circuits, Ulm Univ., Germany
  • Volume
    35
  • Issue
    20
  • fYear
    1999
  • fDate
    9/30/1999 12:00:00 AM
  • Firstpage
    1777
  • Lastpage
    1779
  • Abstract
    Vertical pnp bipolar transistors on diamond have been fabricated by doping the base with deep nitrogen donor (Ec-Ed=1.7 eV). The pn junction formed by the nitrogen donors and boron acceptors was confirmed. Transistor characteristics in common emitter and common-base modes were measured at room temperature
  • Keywords
    bipolar transistors; deep levels; diamond; elemental semiconductors; nitrogen; semiconductor doping; semiconductor epitaxial layers; wide band gap semiconductors; C:N-C:B; boron acceptor; deep nitrogen donor; diamond substrate; doping; epitaxial pnp bipolar transistor; pn junction;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19991201
  • Filename
    811182
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1282518