• DocumentCode
    1282568
  • Title

    IGBT based zero voltage transition full bridge PWM converter for high power applications

  • Author

    Cho, J.G.

  • Author_Institution
    Div. of Power Electron. Res., Korea Electrotechnol. Res. Inst., Changwon, South Korea
  • Volume
    143
  • Issue
    6
  • fYear
    1996
  • fDate
    11/1/1996 12:00:00 AM
  • Firstpage
    475
  • Lastpage
    480
  • Abstract
    A novel zero-voltage-transition (ZVT) full-bridge (FB) PWM converter for high power applications is proposed. An auxiliary resonant network which consists of two small switches (10-20% of main switches) and one small inductor provides zero-voltage-switching (ZVS) for wide line and load ranges. This allows addition of external capacitors to the switches maintaining reasonable ZVS range, and IGBTs can be used instead of MOSFETs for the main switches. In addition, the proposed converter has advantages over the ZVS-FB-PWM converters such as minimum device voltage and current stresses, negligible duty cycle loss, and no severe parasitic ringing on the secondary, which enables the proposed converter to handle higher voltage and power with lower cost. Operation, features and design considerations are presented and verified experimentally on a 2 kW, 85 kHz IGBT based prototype
  • Keywords
    PWM power convertors; bridge circuits; inductors; insulated gate bipolar transistors; power semiconductor switches; switching circuits; 2 kW; 85 kHz; IGBT; auxiliary resonant network; full bridge PWM converter; high power applications; minimum device current stress; minimum device voltage stress; small inductor; small switches; zero voltage transition; zero-voltage-switching;
  • fLanguage
    English
  • Journal_Title
    Electric Power Applications, IEE Proceedings -
  • Publisher
    iet
  • ISSN
    1350-2352
  • Type

    jour

  • DOI
    10.1049/ip-epa:19960548
  • Filename
    553465