DocumentCode
1282568
Title
IGBT based zero voltage transition full bridge PWM converter for high power applications
Author
Cho, J.G.
Author_Institution
Div. of Power Electron. Res., Korea Electrotechnol. Res. Inst., Changwon, South Korea
Volume
143
Issue
6
fYear
1996
fDate
11/1/1996 12:00:00 AM
Firstpage
475
Lastpage
480
Abstract
A novel zero-voltage-transition (ZVT) full-bridge (FB) PWM converter for high power applications is proposed. An auxiliary resonant network which consists of two small switches (10-20% of main switches) and one small inductor provides zero-voltage-switching (ZVS) for wide line and load ranges. This allows addition of external capacitors to the switches maintaining reasonable ZVS range, and IGBTs can be used instead of MOSFETs for the main switches. In addition, the proposed converter has advantages over the ZVS-FB-PWM converters such as minimum device voltage and current stresses, negligible duty cycle loss, and no severe parasitic ringing on the secondary, which enables the proposed converter to handle higher voltage and power with lower cost. Operation, features and design considerations are presented and verified experimentally on a 2 kW, 85 kHz IGBT based prototype
Keywords
PWM power convertors; bridge circuits; inductors; insulated gate bipolar transistors; power semiconductor switches; switching circuits; 2 kW; 85 kHz; IGBT; auxiliary resonant network; full bridge PWM converter; high power applications; minimum device current stress; minimum device voltage stress; small inductor; small switches; zero voltage transition; zero-voltage-switching;
fLanguage
English
Journal_Title
Electric Power Applications, IEE Proceedings -
Publisher
iet
ISSN
1350-2352
Type
jour
DOI
10.1049/ip-epa:19960548
Filename
553465
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