Parasitic-Element Compensation Based on Factorization Method for Microwave Inverse Class-F/Class-F Amplifiers

Author

Miura, Osamu ; Ishikawa, Ryo ; Honjo, Kazuhiko

Author_Institution

Dept. of Commun. Eng. & Inf., Univ. of Electro-Commun., Chofu, Japan

Volume

22

Issue

10

fYear

2012

Firstpage

521

Lastpage

523

Abstract

A novel parasitic-element compensation design method with a combination of factorization and coefficient comparison for microwave inverse class-F/class-F amplifiers is proposed. This novel method is applicable to all circuit topologies, including L-C parallel and series resonance circuits, and ladder circuits with arbitrary order of the higher harmonic frequencies. The validity of the proposed method has been checked with a fabricated 1.9 GHz inverse class-F GaN-HEMT power amplifier, considering harmonic frequencies up to the fourth order. A drain efficiency of 77% and power added efficiency of 70% were obtained at 1.88 GHz.

Keywords

high electron mobility transistors; microwave amplifiers; power amplifiers; GaN; L-C parallel resonance circuits; circuit topologies; coefficient comparison; factorization method; frequency 1.88 GHz; frequency 1.9 GHz; inverse class-F GaN-HEMT power amplifier; ladder circuits; microwave inverse class-F/class-F amplifiers; parasitic-element compensation design method; series resonance circuits; Gallium nitride; HEMTs; Harmonic analysis; Impedance; Microwave circuits; RLC circuits; Amplifier; class-F; inverse class-F; microwave; parasitic compensation;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2012.2215844

Filename

6297487