Title :
CW operation of semiconductor ring lasers
Author :
Krauss, T. ; Laybourn, P.J.R. ; Roberts, John
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Abstract :
Semiconductor ring lasers have been fabricated in single quantum well material using electron-beam lithography and SiCl4 dry etching. CW operation has been achieved in 84 mu m diameter rings at a threshold current of 24 mA. This low value makes the structure very suitable for monolithic integration in optoelectronic circuits.
Keywords :
integrated optoelectronics; ring lasers; semiconductor junction lasers; sputter etching; 24 mA; 84 micron; CW operation; OEIC; SiCl 4 dry etching; electron-beam lithography; monolithic integration in optoelectronic circuits; single quantum well material; threshold current; whispering gallery modes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901349
