AC Performance of Polysilicon Leaky-Mode MSM Photodetectors

Author

Pownall, Robert ; Kindt, Joel ; Nikkel, Phil ; Lear, Kevin L.

Author_Institution

Colorado State Univ., Fort Collins, CO, USA

Volume

28

Issue

18

fYear

2010

Firstpage

2724

Lastpage

2729

Abstract

Pulse response of polysilicon metal-semiconductor-metal (MSM) photodetectors fabricated in a standard CMOS processes is described, including demonstration of pulse full-width at half-max (FWHM) of 1.32 ns. Pulse FWHM as low as 0.81 ns has been measured, as have 10%-90% rise times of 0.39 ns. Measured detector performance is limited by laser diode modulation capabilities. An analytic expression for the time domain response in the presence of body and contact recombination is reported.

Keywords

CMOS integrated circuits; metal-semiconductor-metal structures; optical interconnections; photoconductivity; photodetectors; semiconductor lasers; AC performance; CMOS process; laser diode modulation; metal-semiconductor-metal photodetectors; polysilicon leaky-mode MSM photodetectors; pulse full-width at half-max; pulse response; time domain response; CMOS process; Contacts; Detectors; Diode lasers; Grain boundaries; Integrated circuit measurements; Optical pulses; Optical waveguides; Photoconducting materials; Photoconductivity; Photodetectors; Pulse measurements; Schottky barriers; Spontaneous emission; Complementary metal-oxide-semiconductor (CMOS)-compatible optoelectronic integrated circuit; leaky-mode metal-semiconductor-metal photodetectors; optical interconnect; photoconductivity;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/JLT.2010.2063016

Filename

5535092