Title :
Uniform CW operation of multiple-wavelength vertical-cavity surface-emitting lasers fabricated by mask molecular beam epitaxy
Author :
Saito, Hideaki ; Ogura, Ichiro ; Sugimoto, Yoshimasa
Author_Institution :
Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan
Abstract :
Monolithically integrated four-wavelength vertical-cavity surface-emitting laser arrays are fabricated by mask molecular beam epitaxy. The lasing wavelengths are spaced by 5 nm, and their standard deviation for 10/spl times/12 VCSELs ranges from 0.27-0.38 nm. Uniform threshold current and 1.5-mW light output are achieved under continuous wave conditions.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; masks; molecular beam epitaxial growth; optical fabrication; quantum well lasers; semiconductor growth; semiconductor laser arrays; surface emitting lasers; 1.5 mW; CW operation; InGaAs; InGaAs QW lasers; continuous wave conditions; four-wavelength vertical-cavity surface-emitting laser arrays; lasing wavelengths; mW light output; mask molecular beam epitaxy; monolithically integrated; multiple-wavelength vertical-cavity surface-emitting lasers; standard deviation; uniform threshold current; Distributed Bragg reflectors; Fabry-Perot; Molecular beam epitaxial growth; Optical arrays; Optical surface waves; Reflectivity; Surface emitting lasers; Thickness control; Vertical cavity surface emitting lasers; Wavelength division multiplexing;
Journal_Title :
Photonics Technology Letters, IEEE
