Title :
Room-temperature pulsed operation of 1.5-μm vertical cavity lasers with an InP-based Bragg reflector
Author :
Streubel, K. ; Rapp, S. ; Andre, J. ; Wallin, J.
Author_Institution :
Dept. of Electron., R. Inst. of Technol., Stockholm, Sweden
Abstract :
We report on a 1.5-μm vertical-cavity laser that utilizes one GaInAsP-InP and one Si-SiO2 mirror in combination with a strain-compensated GaInAsP quantum-well active layer. Pulsed lasing operation was achieved in a temperature range from -160 to +43/spl deg/C. The lasers exhibit 30-mA pulsed threshold current at room temperature. CW operation was obtained up to -25/spl deg/C.
Keywords :
III-V semiconductors; compensation; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser mirrors; laser transitions; quantum well lasers; -160 to 43 C; /spl mu/m vertical cavity lasers; 1.5 mum; 30 mA; CW operation; GaInAsP; GaInAsP-InP; InP; InP-based Bragg reflector; Si-SiO/sub 2/; Si-SiO/sub 2/ mirror; pulsed lasing operation; pulsed threshold current; room temperature; room-temperature pulsed operation; strain-compensated GaInAsP quantum-well active layer; temperature range; Conducting materials; Dielectric materials; Fiber lasers; Mirrors; Optical fiber communication; Optical pulses; Quantum well lasers; Temperature; Threshold current; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
