Title :
High On/Off-Current Ratio in Bottom-Gated Microcrystalline-Silicon Thin-Film Transistors With Vertical-Offset Structure
Author :
Toyota, Yoshiaki ; Matsumura, Mieko ; Suzumura, Isao ; Kaitoh, Takuo ; Gotoh, Jun ; Ohkura, Makoto
Author_Institution :
Central Res. Lab., Hitachi, Ltd., Tokyo, Japan
Abstract :
The high on/off-current ratio of microcrystalline-silicon thin-film transistors (TFTs) with vertical offset was demonstrated. These TFTs have a bottom-gate structure and offset regions formed along the side surfaces of the thick interlayer films. Due to a decrease of maximum electric-field intensity and a narrow distribution of high electric field, the on/off current ratio of vertical-offset TFTs is about three orders of magnitude higher than that of conventional TFTs.
Keywords :
elemental semiconductors; silicon; thin film transistors; Si; bottom-gated microcrystalline thin-film transistors; high on-off-current ratio; maximum electric-field intensity; thick interlayer films; vertical-offset structure; Crystallization; Displays; Electrodes; Electron mobility; Fabrication; Laminates; Leakage current; Logic gates; Plasma temperature; Silicon; Silicon compounds; Thin film devices; Thin film transistors; Bottom gate; Poole–Frenkel (PF); microcrystalline silicon $(muhbox{c-Si})$ ; off current; on/off-current ratio; vertical offset;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2055533
