Title :
GaInAsSb/GaSb pn photodiodes for detection to 2.4 mu m
Author :
Tournie, E. ; Villemain, E. ; Joullie, A. ; Gouskov, L. ; Karim, Medles ; Salesse, I.
Author_Institution :
Montpellier II Univ., Sci. et Technol. du Languedoc, France
fDate :
7/4/1991 12:00:00 AM
Abstract :
Ga0.77In0.23As0.20Sb0.80/GaSb pn heterojunction photodiodes have been prepared by liquid phase epitaxy. They exhibit a long-wavelength threshold of 2.4 mu m. The room-temperature dark current at V=-0.5 V is 3 mu A (10 mA/cm2) and the external quantum efficiency is around 40% in the wavelength range 1.75-2.25 mu m. The estimated detectivity D* at 2.2 mu m is 8.8*109 cm Hz12/ W-1.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared detectors; liquid phase epitaxial growth; photodiodes; semiconductor epitaxial layers; semiconductor junctions; 1.5 to 2.4 micron; 3 muA; 40 percent; GaInAsSb-GaSb; IR photodiodes; detectivity; external quantum efficiency; heterojunction photodiodes; liquid phase epitaxy; long-wavelength threshold; mid infrared; p-n photodiodes; pn photodiodes; room-temperature dark current; wavelength range;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910776
