DocumentCode
1283138
Title
Ultralow threshold strained InGaAs-GaAs quantum well lasers by impurity-induced disordering
Author
Zou, W.X. ; Merz, J.L. ; Fu, R.J. ; Hong, Choong
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Volume
27
Issue
14
fYear
1991
fDate
7/4/1991 12:00:00 AM
Firstpage
1241
Lastpage
1243
Abstract
Stripe-geometry strained InGaAs-GaAs quantum well lasers were fabricated by impurity induced disordering. Threshold currents as low as 2.2 mA at room temperature continuous operation (RT CW) were obtained for uncoated lasers having 1.2 mu m wide, 215 mu m long active stripes. The authors believe that this ultralow threshold is mainly due to the very small active stripe width and the excellent electrical confinement of the laser.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; semiconductor quantum wells; 1.2 micron; 2.2 mA; 215 micron; electrical confinement; impurity induced disordering; room temperature continuous operation; semiconductors; small active stripe width; strained InGaAs-GaAs quantum well lasers; stripe geometry lasers; threshold current; ultralow threshold; uncoated lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19910778
Filename
81164
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