Title :
Stability evaluation of a ridge-integrated laser modulator based on a butt-coupling approach
Author :
Hornung, V. ; Dû, F. Le ; Starck, C. ; Gelly, G. ; Emery, J.Y. ; Chaumont, C. ; Bodéré, A. ; Hache, C. ; Gouziégou, O. Le ; Derouin, E. ; Michaud, G. ; Matabon, M. ; Vinchant, J.F. ; Lesterlin, D.
Author_Institution :
Alcatel Corp. Res. Center, Marcoussis, France
Abstract :
Ridge integrated laser modulator (ILM) devices were fabricated using a butt-coupling technology based on two-gas-source molecular-beam epitaxy. A complete stability evaluation was undertaken, including a reliability study on discrete lasers, discrete modulators, and integrated devices. High temperature, high current, and high voltage were applied for over 1900 h without significant evolution of the electrooptical characteristics. A functional aging test at the current corresponding to a 2-mW output power and the modulator bias necessary to reach the maximum extinction ratio was performed for more than 1500 h. The butt-coupling region does not affect the reliability of the integrated devices.
Keywords :
ageing; electro-optical modulation; integrated optics; integrated optoelectronics; laser reliability; laser stability; life testing; optical testing; optical waveguides; ridge waveguides; semiconductor device reliability; semiconductor device testing; semiconductor lasers; 1500 h; 1900 h; 2 mW; aging test; butt-coupling approach; butt-coupling region; discrete lasers; discrete modulators; electrooptical characteristics; high current; high temperature; high voltage; integrated devices; mW output power; maximum extinction ratio; modulator bias; reliability study; ridge-integrated laser modulator; stability evaluation; two-gas-source molecular-beam epitaxy; Aging; Extinction ratio; Laser stability; Lasers and electrooptics; Molecular beam epitaxial growth; Performance evaluation; Power generation; Temperature; Testing; Voltage;
Journal_Title :
Photonics Technology Letters, IEEE
