• DocumentCode
    1283245
  • Title

    Zero-net-strain multiquantum well lasers

  • Author

    Perrin, S.D. ; Cooper, Diana Marina

  • Volume
    27
  • Issue
    14
  • fYear
    1991
  • fDate
    7/4/1991 12:00:00 AM
  • Firstpage
    1268
  • Lastpage
    1270
  • Abstract
    A zero-net-strain MQW wafer has been grown. The structure consisted of 16 In0.67Ga0.33As wells with 15 InGaAsP ( lambda g=1.3 mu m) negatively mismatched barriers. Short buried heterostructure lasers exhibited low CW threshold currents and high output powers. RIN measurements imply a maximum 3 dB modulation bandwidth of 38 GHz.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical modulation; semiconductor junction lasers; 1.3 micron; 3 dB modulation bandwidth; 38 GHz; In 0.67Ga 0.33As-InGaAsP; MQW wafer; RIN measurements; buried heterostructure lasers; high output powers; low CW threshold currents; multiquantum well lasers; semiconductor lasers; short BH lasers; zero-net-strain;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910795
  • Filename
    81181
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1283245