DocumentCode
1283273
Title
Impact ionization rates in
Author
Watanabe, I. ; Torikai, T. ; Makita, K. ; Fukushima, K. ; Uji, Toshio
Author_Institution
NEC Corp., Kawasaki, Japan
Volume
11
Issue
10
fYear
1990
Firstpage
437
Lastpage
438
Abstract
Impact ionization rates for electrons and holes in
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; impact ionisation; indium compounds; p-i-n diodes; Al/sub 0.48/In/sub 0.52/As; AlInAs-GaInAs; electric field range; electron-initiated configuration; impact ionization-rate ratio; metalorganic vapor phase epitaxy; p/sup +/-i-n diodes; photomultiplication measurements; superlattice avalanche photodiodes; Avalanche breakdown; Breakdown voltage; Charge carrier processes; Dark current; Diodes; Electric variables measurement; Impact ionization; Laser beams; Nickel alloys; Photoconductivity;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.62988
Filename
62988
Link To Document