The fabrication of a broad-spectrum light-emitting diode using high-energy ion implantation

Author

Poole, P.J. ; Davies, M. ; Dion, M. ; Feng, Y. ; Charbonneau, S. ; Goldberg, R.D. ; Mitchell, I.V.

Author_Institution

Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada

Volume

8

Issue

9

fYear

1996

Firstpage

1145

Lastpage

1147

Abstract

High-energy ion implantation is used to spatially modify the bandgap of a 1.5-μm laser structure to fabricate a broad spectrum light emitting diode (LED). An increase in the emission full width half maximum (FWHM) from 28 nm to 90 nm is observed. An absorbing section at one end of the device is used to suppress lasing operation and remove Fabry-Perot noise.

Keywords

ion implantation; optical fabrication; semiconductor quantum wells; semiconductor technology; superluminescent diodes; /spl mu/m laser structure bandgap; 1.5 mum; Fabry-Perot noise; LED; absorbing section; broad spectrum light emitting diode; broad-spectrum light-emitting diode; emission full width half maximum; high-energy ion implantation; lasing operation suppression; superluminescent diode fabrication; Annealing; Indium phosphide; Ion implantation; Light emitting diodes; Optical device fabrication; Optical fiber cables; Photonic band gap; Superluminescent diodes; Surface emitting lasers; Thickness control;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.531817

Filename

531817