Title :
Low noise, tunable GaAs bipolar oscillator
Author :
Dearn, A. ; Parkinson, G. ; Topham, P.J.
Author_Institution :
Ferranti Int. plc, Poynton, UK
fDate :
7/4/1991 12:00:00 AM
Abstract :
Varactor tuned oscillators using GaAs heterojunction bipolar transistors (HBTs) covering the frequency range 2.7-6.2 GHz are reported. These oscillators have the widest electronic tuning range so far reported for HBT oscillators. The oscillators have a phase noise of -105 dBc/Hz at 100 kHz offset which is the lowest phase noise so far obtained with a broadband HBT oscillator.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; microwave oscillators; solid-state microwave circuits; tuning; varactors; variable-frequency oscillators; 2.7 to 6.2 GHz; GaAs; SHF; broadband HBT oscillator; electronic tuning; heterojunction bipolar transistors; low noise tunable oscillator; varactor tuned oscillator;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910813
