DocumentCode :
1283399
Title :
Reactance anisotropy in superconducting YBa2Cu3O7-x films
Author :
Raven, M.S. ; Inameti, E.E. ; Murray, B.G.
Author_Institution :
Dept. of Electr. & Electron. Eng., Nottingham Univ., UK
Volume :
27
Issue :
14
fYear :
1991
fDate :
7/4/1991 12:00:00 AM
Firstpage :
1309
Lastpage :
1310
Abstract :
The reactance of thin epitaxial films of YBa2Cu3O7-x has been measured as a function of temperature, frequency and film crystallographic orientation. The films were grown on SrTiO5 and MgO single crystal substrates by in situ RF sputter deposition. For YBa2Cu3O7-x deposited on SrTiO3 [110] the film reactance is capacitive for temperatures between 300 K and Tc and frequencies above a few kilohertz. Below Tc the reactance of the films is inductive. For T>Tc the (resonant) frequency at which X=0 decreases for increasing temperatures and the films are inductive for frequencies less than the resonant frequency. For well orientated films deposited onto SrTiO3 [100] and MgO [100] substrates the reactance is purely inductive for temperatures between 10-300 K and frequencies up to 13 MHz.
Keywords :
barium compounds; electric reactance; high-temperature superconductors; sputtered coatings; superconducting thin films; yttrium compounds; 10 to 300 K; 13 MHz; MgO; RF sputter deposition; SrTiO 5; film crystallographic orientation; film reactance; frequency; high temperature superconductors; reactance anisotropy; single crystal substrates; superconducting YBa 2Cu 3O 7-x films; temperature;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19910818
Filename :
81205
Link To Document :
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