Title :
10 Gbit/s D flipflop using AlInAs/InGaAs
Author :
Jalali, Bahram ; Smith, Peter ; Nottenburg, R.N. ; Banu, Mihai ; Humphrey, D.A. ; Montgomery, R.K. ; Sivco, D. ; Cho, Andrew Y.
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
fDate :
7/18/1991 12:00:00 AM
Abstract :
It is demonstrated that high speed circuits can be achieved in InGaAs HBT technology with relaxed transistor design rules. A 10 Gbit/s D flipflop has been realised using HBTs with a base thickness of 1500 AA and collector thickness of 5000 AA and with 4 mu m emitter stripe width.
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; flip-flops; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated logic circuits; 10 Gbit/s; AlInAs-InGaAs; D flipflop; HBT technology; base thickness; collector thickness; emitter stripe width; high speed circuits;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910826
