DocumentCode
1283423
Title
Blue-chirp electroabsorption modulators with very thick quantum wells
Author
Wakita, K. ; Yoshino, K. ; Kotaka, I. ; Kondo, S. ; Noguchi, Y.
Author_Institution
NTT Opto-Electron. Labs., Kanagawa, Japan
Volume
8
Issue
9
fYear
1996
Firstpage
1169
Lastpage
1171
Abstract
Electroabsorption modulators operating at a wavelength of 1.55 μm with very thick quantum wells of 19.6 mm were fabricated using InGaAlAs-InAlAs multiple quantum wells. Blue-chirp (/spl alpha/<0) operation for low applied bias was demonstrated with low insertion loss.
Keywords
III-V semiconductors; aluminium compounds; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; optical fabrication; optical losses; semiconductor quantum wells; 1.55 mum; 19.6 nm; InGaAlAs-InAlAs; InGaAlAs-InAlAs multiple quantum wells; blue-chirp electroabsorption modulators; low applied bias; low insertion loss; very thick quantum wells; Chirp modulation; Excitons; Insertion loss; Optical fiber polarization; Optical fibers; Optical modulation; Quantum well devices; Tellurium; Voltage; Wet etching;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.531825
Filename
531825
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