Title :
GaAs/AlGaAs dynamic random access memory cell
Author :
Chen, C.L. ; Goodhue, W.D. ; Mahoney, L.J.
Author_Institution :
Lincoln Lab., MIT, Lexington, MA, USA
fDate :
7/18/1991 12:00:00 AM
Abstract :
A single-transistor dynamic random access memory circuit using a GaAs/AlGaAs structure as the storage cell and modulation-doped field-effect transistors for memory accessing and output sensing has been developed. The functionality of the memory is demonstrated and a storage time of 5.4s is measured at room temperature.
Keywords :
DRAM chips; III-V semiconductors; aluminium compounds; field effect integrated circuits; gallium arsenide; high electron mobility transistors; 5.4 s; DRAM; GaAs-AlGaAs; MODFET; dynamic random access memory; memory accessing; modulation-doped field-effect transistors; output sensing; single transistor memory cell; storage time;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910837
