Title :
Optimum germanium profile for SiGe/int
Author :
Manning, B.M. ; Walkey, D.J. ; Tarr, N.G.
fDate :
7/18/1991 12:00:00 AM
Abstract :
The thermal stability of an SiGe base HBT is closely related to the integrated Ge content in the base. It is therefore appropriate to consider what form the Ge profile should take to minimise the base transit time tau B for a given total Ge content. It is shown that a linear increase in Ge content from the base-emitter to the base-collector junction is required to minimise.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; semiconductor materials; stability; SiGe base HBT; SiGe/int; base emitter junction; base transit time; base-collector junction; optimum Ge profile; thermal stability;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910841
