• DocumentCode
    1283574
  • Title

    Application ofNicollian-Reisman model to negative point-to-plane corona oxidation of silicon

  • Author

    Madani, M.R. ; Ajmera, P.K.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Louisiana State Univ., Baton Rouge, LA, USA
  • Volume
    27
  • Issue
    15
  • fYear
    1991
  • fDate
    7/18/1991 12:00:00 AM
  • Firstpage
    1352
  • Lastpage
    1353
  • Abstract
    The expression for silicon oxide growth proposed by Nicollian and Reisman for thermal oxidation is applied to corona discharge oxidation. The model parameter values indicate that at a given temperature the latter is more reaction rate controlled than thermal oxidation. The higher oxidation growth rate for the corona discharge oxidation is attributed to relaxation of the oxide network.
  • Keywords
    coating techniques; corona; elemental semiconductors; insulating thin films; modelling; oxidation; silicon; silicon compounds; Nicollian-Reisman model; Si; SiO 2 growth; corona discharge oxidation; model parameter values; negative point-to-plane oxidation; oxide network relaxation; reaction rate controlled; semiconductor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910851
  • Filename
    81236
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1283574