DocumentCode :
1283741
Title :
Gallium arsenide in Japan
Author :
Mortensen, Paul
Volume :
31
Issue :
2
fYear :
1985
fDate :
2/1/1985 12:00:00 AM
Firstpage :
115
Lastpage :
118
Abstract :
GaAs is a crystalline material in which electrons move five to six times faster than in silicon, making a GaAs semiconductor, in theory at least, superior to a silicon semiconductor. Japanese experience to date suggests that for GaAs to demonstrate this superiority, however, problems in crystal production and device fabrication must first be overcome
fLanguage :
English
Journal_Title :
Electronics and Power
Publisher :
iet
ISSN :
0013-5127
Type :
jour
DOI :
10.1049/ep.1985.0096
Filename :
5188277
Link To Document :
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