• DocumentCode
    1283747
  • Title

    Thickness measurement of thin oxide layers in MOS capacitors

  • Author

    Duzelier, S. ; Sarrabayrouse, G. ; Prom, J.L. ; Hollinger, G.

  • Author_Institution
    Centre d´Elaboration des Mater. et d´Etudes Structurales, Toulouse, France
  • Volume
    27
  • Issue
    16
  • fYear
    1991
  • Firstpage
    1399
  • Lastpage
    1400
  • Abstract
    The validity of the SiO2 layer thickness determined from capacitance-voltage measurements in MOS devices is demonstrated by comparison with results obtained by X-ray photoelectron spectroscopy, high-resolution transmission electron microscopy and spectroscopic ellipsometry published elsewhere in the literature.
  • Keywords
    capacitors; dielectric thin films; metal-insulator-semiconductor devices; silicon compounds; thickness measurement; C-V measurement; MOS capacitors; MOS devices; SiO 2 layer thickness; X-ray photoelectron spectroscopy; capacitance-voltage measurements; high-resolution transmission electron microscopy; spectroscopic ellipsometry; thickness measurement; thin oxide layers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910878
  • Filename
    81266
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1283747