Title :
Thickness measurement of thin oxide layers in MOS capacitors
Author :
Duzelier, S. ; Sarrabayrouse, G. ; Prom, J.L. ; Hollinger, G.
Author_Institution :
Centre d´Elaboration des Mater. et d´Etudes Structurales, Toulouse, France
Abstract :
The validity of the SiO2 layer thickness determined from capacitance-voltage measurements in MOS devices is demonstrated by comparison with results obtained by X-ray photoelectron spectroscopy, high-resolution transmission electron microscopy and spectroscopic ellipsometry published elsewhere in the literature.
Keywords :
capacitors; dielectric thin films; metal-insulator-semiconductor devices; silicon compounds; thickness measurement; C-V measurement; MOS capacitors; MOS devices; SiO 2 layer thickness; X-ray photoelectron spectroscopy; capacitance-voltage measurements; high-resolution transmission electron microscopy; spectroscopic ellipsometry; thickness measurement; thin oxide layers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910878
