Very high-speed metal-semiconductor-metal InGaAs:Fe photodetectors with InP:Fe barrier enhancement layer grown by low pressure metalorganic chemical vapour deposition

Author

Kuhl, D. ; Hieronymi, F. ; Bottcher, E.H. ; Wolf, Tilman ; Krost, A. ; Bimberg, Dieter

Author_Institution

Inst. for Festkorperphys., Tech. Univ., Berlin, Germany

Volume

26

Issue

25

fYear

1990

Firstpage

2107

Lastpage

2109

Abstract

The fabrication of long-wavelength metal-semiconductor-metal photodetectors using an InGaAs:Fe photoactive layer and an InP:Fe barrier enhancement layer is reported. An internal quantum efficiency of 100% and a dark current of 250 nA at 5 V bias is achieved. High-speed performance is studied as a function of contact spacing, showing an impulse response of less than 18 ps. Microwave s₁₁-parameter measurements are used to determine the values of the parasitic elements due to device structure and packaging. The resulting -3 dB cutoff frequency of up to 75 GHz demonstrates that almost transit time limited high-speed operation is obtained.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; iron; metal-semiconductor-metal structures; photodetectors; vapour phase epitaxial growth; 100 percent; 18 ps; 250 nA; 5 V; 75 GHz; InGaAs:Fe photodetectors; InP:Fe barrier enhancement layer; contact spacing; cutoff frequency; dark current; device structure; fabrication; high-speed operation; impulse response; internal quantum efficiency; long-wavelength metal-semiconductor-metal photodetectors; low pressure metalorganic chemical vapour deposition; packaging; parasitic elements; s₁₁-parameter measurements; semiconductors; transit time limited;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19901356

Filename

59624