InGaAs/InAlAs/InP collector-up microwave heterojunction bipolar transistors

Author

Sato, Hiroya ; Vlcek, James C. ; Fonstad, Clifton G. ; Meskoob, B. ; Prasad, S.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA

Volume

11

Issue

10

fYear

1990

Firstpage

457

Lastpage

459

Abstract

Collector-up InGaAs/InAlAs/InP heterojunction bipolar transistors (HBTs) were successfully fabricated, and their DC and microwave characteristics measured. High collector current density operation (J/sub c/>30 kA/cm/sup 2/) and high base-emitter junction saturation current density (J/sub 0/>10/sup -7/ A/cm/sup 2/) were achieved. A cutoff frequency of f/sub t/=24 GHz and a maximum frequency of oscillation f/sub max/=20 GHz at a collector current density of J/sub 0/=23 kA/cm/sup 2/ were achieved on a nominal 5- mu m*10- mu m device.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; solid-state microwave devices; 20 GHz; 24 GHz; DC characteristics; InGaAs-InAlAs-InP; collector current density; collector-up microwave heterojunction bipolar transistors; cutoff frequency; high base-emitter junction saturation current density; microwave characteristics; oscillation frequency; Current density; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Indium phosphide; Ion implantation; Materials science and technology; Microwave devices; Microwave transistors; Substrates;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.62995

Filename

62995