Title :
Calculation of lateral distribution of interface traps along MIS channel
Author :
Henning, A.K. ; Dimauro, J.A.
Author_Institution :
Thayer Sch. of Eng., Dartmouth Coll., Hanover, NH, USA
Abstract :
The lateral distribution of interface traps, averaged over the semiconductor band gap, is calculated in an MIS structure. The calculation is based on the well known charge-pumping technique. The calculation has been applied to p-channel MOSFETs.
Keywords :
electron traps; insulated gate field effect transistors; interface electron states; metal-insulator-semiconductor structures; semiconductor device models; MIS channel; MIS structure; charge-pumping technique; lateral distribution of interface traps; p-channel MOSFETs; semiconductor band gap;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910906
