Title :
Schottky diodes of Au on GaAs/sub 1-x/Sb/sub x//GaAs n-N heterostructures grown by MBE
Author_Institution :
Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
Abstract :
Au Schottky barrier heights on molecular-beam-epitaxial grown n-GaAs/sub 1-x/Sb/sub x//N-GaAs heterostructures with x up to 0.26 have been studied. It was found that phi /sub bn/=0.9-1.77x+2.89x/sup 2/, or phi /sub bn/ approximately=0.77E/sub g/-0.20 for x<0.26. The pinning position of the Fermi level with respect to the valence-band edge for x<0.26 takes the form of E/sub pin/=-0.52x+0.53 eV, which also appears to be valid for an x value up to 1.0.<>
Keywords :
III-V semiconductors; Schottky-barrier diodes; gallium arsenide; gallium compounds; gold; molecular beam epitaxial growth; semiconductor growth; Au-GaAs/sub 1-x/Sb/sub x/-GaAs heterostructures; Fermi level; MBE; Schottky barrier heights; valence-band edge; Electron traps; Epitaxial growth; Gallium arsenide; Gold; Lattices; Leakage current; Molecular beam epitaxial growth; Schottky barriers; Schottky diodes; Substrates;
Journal_Title :
Electron Device Letters, IEEE
