Light emission in AlGaAs/GaAs HEMTs and GaAs MESFETs induced by hot carriers

Author

Zanoni, Ennco ; Bigliardi, Stefano ; Capelletti, Rosanna ; Lugli, Paolo ; Magistrali, Fabnzio ; Manfredi, Manfredo ; Paccagnella, Alessandro ; Testa, Nicoletta ; Canali, Claudio

Author_Institution

Dept. of Electron. & Inf., Padova Univ., Italy

Volume

11

Issue

11

fYear

1990

Firstpage

487

Lastpage

489

Abstract

Light emission in submicrometer gate AlGaAs/GaAs HEMTs and GaAs MESFETs has been observed at high drain bias values (>4.0 V). The spectral distribution of the emitted photons in the 1.7-2.9-eV range does not correspond to a simple Maxwellian distribution function of the electron energies in the channel. Light emission is observed in correspondence with nonnegligible gate and substrate hole currents, due to the collection of holes generated by impact ionization.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; electroluminescence; gallium arsenide; high electron mobility transistors; hot carriers; impact ionisation; 1.7 to 2.9 eV; AlGaAs-GaAs; GaAs; HEMTs; MESFETs; electron energies; emitted photon spectral distribution; gate hole currents; high drain bias; hot carriers; impact ionization; light emission; submicrometer gate; substrate hole currents; Associate members; Gallium arsenide; HEMTs; Hot carriers; Irrigation; MESFETs; MODFETs; Scanning electron microscopy; Testing; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.63009

Filename

63009