Title :
Demonstration of high performance heterojunction field effect transistor in InAlAs/InGaAs/InAlGaAs/InP material system
Author :
Mand, R.S. ; Simmons, Jay G.
Author_Institution :
Furukana Electr. Technol. Inc., Santa Clara, CA, USA
Abstract :
The heterojunction field effect transistor (HFET) is demonstrated for the first time in InAlAs/InGaAs/InAlGaAs/InP material system using molecular beam epitaxy (MBE). A tungsten gate selfaligned HFET structure was made by ion imitation and rapid thermal annealing. The 1.0 mu m self-aligned gate HFET exhibited room temperature transconductance of 490 mS/mm with cutoff frequency of 9 GHz.
Keywords :
III-V semiconductors; aluminium compounds; annealing; field effect transistors; gallium arsenide; indium compounds; ion implantation; molecular beam epitaxial growth; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; semiconductor junctions; 1 micron; 9 GHz; HFET; InAlAs-InGaAs-InAlGaAs-InP; InP substrate; MBE; W gate; cutoff frequency; heterojunction field effect transistor; ion imitation; lattice matching; molecular beam epitaxy; n-channel; rapid thermal annealing; room temperature transconductance; self-aligned gate HFET; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910910
