A narrow-channel, 0.2- mu m gate-length, double-quantum-well pseudomorphic MODFET with high power gain at millimeter-wave frequencies

Author

Metze, George M. ; Lee, Timothy T. ; Bass, J.F. ; Laux, P.L. ; Carlson, H.C. ; Cornfeld, A.B.

Author_Institution

Comsat Lab., Clarksburg, MD, USA

Volume

11

Issue

11

fYear

1990

Firstpage

493

Lastpage

495

Abstract

State-of-the-art pseudomorphic MODFETs were developed with metallurgical gate lengths between 0.22 and 0.25 mu m, very short source-to-drain spacings of 0.7 mu m, and a double-quantum-well material structure. S-parameter measurements were performed on these 60- mu m gate-width devices up to 40 GHz. From these S-parameter measurements, an extrapolated value of 82 GHz was estimated for F/sub t/. Modeling of the power gain as a function of frequency indicates that F/sub max/ may be as high as 305 GHz.<>

Keywords

S-parameters; high electron mobility transistors; semiconductor quantum wells; solid-state microwave devices; 0.2 micron; 0.22 to 0.25 micron; 0.7 micron; 305 GHz; 40 GHz; 60 micron; 82 GHz; MM-wave frequencies; S-parameter measurements; double-quantum-well pseudomorphic MODFET; gate-width; high power gain; metallurgical gate lengths; narrow-channel; power gain; short source-to-drain spacings; Frequency estimation; Gallium arsenide; Geometry; HEMTs; Inorganic materials; MMICs; MODFETs; Millimeter wave technology; Performance evaluation; Scattering parameters;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.63011

Filename

63011