Fully passivated W-band InAlAs/InGaAs/InP monolithic low noise amplifiers

Author

Wang, H. ; Ng, G.I. ; Lai, R. ; Hwang, Y. ; Lo, D.C.W. ; Dia, R. ; Freudentha, A. ; Block, T.

Author_Institution

Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA

Volume

143

Issue

5

fYear

1996

fDate

10/1/1996 12:00:00 AM

Firstpage

361

Lastpage

366

Abstract

The development of W-band monolithic low noise amplifiers (LNAs) using a fully passivated 0.1 μm pseudomorphic InAlAs/InGaAs/InP low noise HEMT technology is presented. Both wafer passivation and stabilisation bakes have been introduced, for the first time, to the InP HEMT MMIC process to make it more suitable for production. A three-stage single-ended 94 GHz monolithic LNA shows a measured noise figure of 3.3 dB and 20 dB associated gain. A measured noise figure of 2.3 dB is achieved for a single-stage MMIC LNA at 94 GHz. These results represent state-of-the-art performance of HEMT MMIC LNAs at this frequency. The effects due to SiN passivation for both HEMT device and circuit performance are also addressed

Keywords

III-V semiconductors; MMIC amplifiers; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; passivation; semiconductor technology; 0.1 micron; 20 dB; 3.3 dB; 94 GHz; EHF; HEMT MMIC; III V semiconductors; InAlAs-InGaAs-InP; SiN; W-band; circuit performance; gain; measured noise figure; monolithic LNA; monolithic low noise amplifiers; passivation; performance; pseudomorphic low noise HEMT; stabilisation bakes; wafer passivation;

fLanguage

English

Journal_Title

Microwaves, Antennas and Propagation, IEE Proceedings

Publisher

iet

ISSN

1350-2417

Type

jour

DOI

10.1049/ip-map:19960506

Filename

553642