Title :
Tailoring of quantum well laser emission wavelength by antireflection facet coating
Author :
Sacher, J. ; Elsasser, W. ; Göbel, E.O. ; Jung, H.
Author_Institution :
Phillips-Univ., Marburg, Germany
Abstract :
It is demonstrated that the lasing transition of a quantum well laser can be tailored to take place either between the n=1 or n=2 sub-band by proper design of the facet reflectivity. Facet reflectivity is controlled by monitoring the laser emission spectrum in situ during the deposition of anti-reflection (AR) coating.
Keywords :
antireflection coatings; laser tuning; semiconductor junction lasers; semiconductor quantum wells; AR sputter deposition; antireflection facet coating; emission spectrum; emission wavelength tailoring; facet reflectivity; laser wavelength monitoring during sputtering; lasing transition; quantum well laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910916
