• DocumentCode
    1283984
  • Title

    1.5 mu m lithography Si- and Si/SiGe-bipolar transistors for ICs operating at 15 Gbit/s and above

  • Author

    Schreiber, H.U. ; Albers, J.N.

  • Author_Institution
    Ruhr-Univ., Bochum, Germany
  • Volume
    27
  • Issue
    16
  • fYear
    1991
  • Firstpage
    1465
  • Lastpage
    1466
  • Abstract
    Employing the simple, but optimised technology described by the authors, a 15 Gbit/s 2:1 multiplexer IC was implemented. Circuit simulations which are based on measured transistor data predict superior operating speeds using the Si/SiGe HBT in development at the University of Bochum.
  • Keywords
    Ge-Si alloys; bipolar integrated circuits; digital integrated circuits; elemental semiconductors; heterojunction bipolar transistors; multiplexing equipment; semiconductor materials; silicon; 1.5 micron; 15 Gbit/s; HBT; bipolar transistors; digital IC; lithography; multiplexer IC;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910917
  • Filename
    81304
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1283984