Title :
1.5 mu m lithography Si- and Si/SiGe-bipolar transistors for ICs operating at 15 Gbit/s and above
Author :
Schreiber, H.U. ; Albers, J.N.
Author_Institution :
Ruhr-Univ., Bochum, Germany
Abstract :
Employing the simple, but optimised technology described by the authors, a 15 Gbit/s 2:1 multiplexer IC was implemented. Circuit simulations which are based on measured transistor data predict superior operating speeds using the Si/SiGe HBT in development at the University of Bochum.
Keywords :
Ge-Si alloys; bipolar integrated circuits; digital integrated circuits; elemental semiconductors; heterojunction bipolar transistors; multiplexing equipment; semiconductor materials; silicon; 1.5 micron; 15 Gbit/s; HBT; bipolar transistors; digital IC; lithography; multiplexer IC;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910917
