Title :
CMOS Compatible Silicon-on-Insulator Polarization Rotator Based on Symmetry Breaking of the Waveguide Cross Section
Author :
Aamer, Mariam ; Gutierrez, Ana M. ; Brimont, Antoine ; Vermeulen, Diedrik ; Roelkens, Gunther ; Fedeli, Jean-Marc ; Håkansson, Andreas ; Sanchis, Pablo
Author_Institution :
Nanophotonics Technol. Center, Univ. Politec. Valencia, València, Spain
Abstract :
A polarization rotator in silicon-on-insulator technology based on breaking the symmetry of the waveguide cross section is reported. The 25- μm-long device is designed to be integrated with standard grating couplers without the need for extra fabrication steps. Hence, fabrication is carried out by a 2-etch-step complementary metal-oxide-semiconductor compatible process using 193-nm deep ultraviolet lithography. A polarization conversion efficiency of more than -0.85 & dB with insertion losses ranging from -1 to -2.5 & dB over a wavelength range of 30 nm is demonstrated.
Keywords :
CMOS integrated circuits; integrated optics; optical losses; optical waveguides; silicon-on-insulator; ultraviolet lithography; CMOS compatible silicon-on-insulator polarization rotator; deep ultraviolet lithography; insertion losses; polarization conversion efficiency; standard grating couplers; symmetry breaking; waveguide cross section; CMOS integrated circuits; Couplers; Fabrication; Gratings; Optical waveguides; Optimized production technology; Silicon; Integrated optics; polarization rotator; silicon-on-insulator (SOI);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2012.2218593
