Title :
Frequency stabilisation of semiconductor laser using atomic absorption line under direct FSK
Author :
Koizumi, S. ; Sato, T. ; Shimba, M.
Author_Institution :
Fac. of Eng., Niigata Univ., Japan
fDate :
1/7/1988 12:00:00 AM
Abstract :
The oscillation frequency of an AlGaAs laser diode is stabilised using the Rb-D2 absorption line (780 nm) under the direct frequency shift keying (FSK) condition. Only one side (mark or space) frequency signal is used to obtain the feedback signal for stabilisation in this system. The stability obtained is almost the same as that of the case without FSK
Keywords :
III-V semiconductors; aluminium compounds; frequency shift keying; gallium arsenide; laser frequency stability; optical modulation; semiconductor junction lasers; 780 nm; AlGaAs; atomic absorption line; direct FSK; feedback signal; frequency signal; oscillation frequency; semiconductor laser;
Journal_Title :
Electronics Letters
