Modulation properties of an injection-locked semiconductor laser

Author

Lidoyne, O. ; Gallion, Philippe B. ; Erasme, D.

Author_Institution

Ecole Nat. Superieure des Telecommun., Paris, France

Volume

27

Issue

3

fYear

1991

fDate

3/1/1991 12:00:00 AM

Firstpage

344

Lastpage

351

Abstract

The modulation properties of an injection-locked semiconductor laser are investigated using the rate equation formalism. Intensity and phase modulations (IM and PM) are analyzed throughout the locking range where the locked laser is stable. The relaxation oscillation resonance in the IM and PM frequency responses can be dramatically reduced by tuning the injected power and the frequency difference between the master laser and the free-running slave laser. The power spectra under direct modulation are derived throughout the stable locking range. The spreading of the harmonics of the modulated locked laser is strongly affected by the frequency detuning, the injected power, and the injected current modulation. Measurements illustrating the theoretical results are also presented

Keywords

optical modulation; semiconductor junction lasers; PM frequency responses; free-running slave laser; frequency detuning; frequency difference; harmonics; injected current modulation; injected power; injection-locked semiconductor laser; intensity modulations; locking range; master laser; modulated locked laser; modulation properties; phase modulations; power spectra; rate equation formalism; relaxation oscillation resonance; Equations; Frequency; Laser stability; Laser theory; Laser tuning; Master-slave; Phase modulation; Power lasers; Resonance; Semiconductor lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.81332

Filename

81332