Analysis of injection-locked gain-guided diode laser arrays

Author

Verdiell, Jean-Marc ; Frey, Robert ; Huignard, Jean-Pierre

Author_Institution

Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA

Volume

27

Issue

3

fYear

1991

fDate

3/1/1991 12:00:00 AM

Firstpage

396

Lastpage

401

Abstract

A new model for injection-locked gain guided laser arrays is proposed. Diffraction-limited and single-lobe operation of injection-locked arrays is attributed to coherent summation of several transverse modes that are phase locked by injection. The model predicts far-field and near-field patterns, locking bandwidth, beam-steering properties, and locked output power. The effects of varying the master power, beam shape, position, and incidence angle on the slave array facet are also studied. Theoretical and experimental results are compared

Keywords

laser modes; semiconductor laser arrays; beam position; beam shape; beam-steering properties; coherent summation; diffraction limited operation; far field patterns; incidence angle; injection-locked gain-guided diode laser arrays; locked output power; locking bandwidth; master power; near-field patterns; single-lobe operation; slave array facet; transverse modes; Bandwidth; Diffraction; Diode lasers; Laser mode locking; Master-slave; Optical arrays; Phased arrays; Power generation; Predictive models; Semiconductor laser arrays;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.81337

Filename

81337