Title :
Transferred-electron device as a large-signal laser driver
Author :
Hansen, Karsten ; Schlachetzki, Andreas
Author_Institution :
Inst. fuer Halbleitertech., Tech. Univ., Carolo-Wilhelmina, Braunschweig, Germany
fDate :
3/1/1991 12:00:00 AM
Abstract :
A description is presented of the use of a transferred-electron device (TED) as a laser driver for optical communication. This concept is particularly advantageous for the long-wavelength range around 1.3 and 1.55 μm, since InGaAs, lattice-matched to InP, offers the largest current pulse originating from the TE-effect. Moreover large-signal control, inherent pulse shaping at bit rates in the Gbit/s range, and simple fabrication are afforded. The authors simulate the behavior of the TED and find good agreement with experiments. The monolithic integration of a TED and a laser diode compares favorably with current switch circuits in terms of space requirement, speed, and power dissipation
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; optical communication equipment; semiconductor junction lasers; 1.3 to 1.55 micron; III-V semiconductors; InP substrate; fabrication; inherent pulse shaping; large-signal control; large-signal laser driver; laser diode; lattice matched InGaAs-InP; long-wavelength range; monolithic integration; optical communication; power dissipation; space requirement; speed; switch circuits; transferred-electron device; transverse electric effect; Bit rate; Communication system control; Indium gallium arsenide; Indium phosphide; Optical device fabrication; Optical fiber communication; Optical pulses; Pulse shaping methods; Shape control; Switches;
Journal_Title :
Quantum Electronics, IEEE Journal of
